Interplay between counter-surface chemistry and mechanical activation in mechanochemical removal of N-faced GaN surface in humid ambient
Interplay between counter-surface chemistry and mechanical activation in mechanochemical removal of N-faced GaN surface in humid ambient
复制标题
潮湿环境中机械化学去除 N 面 GaN 表面时反表面化学与机械活化之间的相互作用
DOI：
10.1016/j.triboint.2021.107004
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发表时间：
2021-03-30
影响因子：
6.2
通讯作者：
Qian, Linmao
中科院分区：
文献类型：
--
作者：
Guo, Jian;Xiao, Chen;Qian, Linmao
使用金刚石尖端机械去除 GaN 时的机械活化和使用 Al2O3 尖端机械化学去除中的机械活化分别通过 Archard 方程和机械辅助阿伦尼乌斯型动力学模型进行描述。在界面机械化学反应的帮助下，弹性接触下发生明显的材料去除。通过阿累尼乌斯动力学模型和赫兹接触力学分析机械化学反应，半定量地确定了临界活化体积和活化势垒。源自化学活性反面的机械活化通过改变反应动力学的能垒来促进机械化学原子磨损。这项工作可以为 GaN 的机械化学去除机制提供深入的见解。
Mechanical activation in mechanical removal of GaN using diamond tip and mechanochemical removal using Al2O3 tip are described by the Archard equation and mechanically assisted Arrhenius-type kinetic model, respectively. Evident material-removal under elastic contact occurs with the assistance of interfacial mechanochemical reactions. By analyzing the mechanochemical reactions with Arrhenius-type kinetic model and Hertzian contact mechanics, the critical activation volume and activation barrier are determined semiquantitatively. The mechanical activation originating from the chemically active counter-surface facilitates the mechanochemical atomic attrition by altering the energy barrier of the reaction kinetics. This work can provide deep insights into the mechanochemical-removal mechanism of GaN.