Localization potentials in AlGaN epitaxial films studied by scanning near-field optical spectroscopy

Localization potentials in AlGaN epitaxial films studied by scanning near-field optical spectroscopy
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通过扫描近场光谱研究 AlGaN 外延薄膜的局域化电位

DOI：
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发表时间：
2011
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影响因子：
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通讯作者：
M. Shur
M. Shur
中科院分区：
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文献类型：
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作者：
Andrea Pinos;V. Liuolia;S. Marcinkevičius;J. Yang;R. Gaska;M. Shur

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扫描近场光致发光光谱已被应用于评估的AlN的摩尔分数从0.30到0.50变化的外延AlGaN薄膜的带隙波动。一个双重本地化的…
Scanning near-field photoluminescence spectroscopy has been applied to evaluate bandgap fluctuations in epitaxial AlGaN films with the AlN molar fraction varying from 0.30 to 0.50. A dual localizat ...