Preparation and colossal magnetoresistance in a trilayer La0.67Sr0.33MnO3/La0.75MnO3/La0.67Sr0.33MnO3 device by dc magnetron sputtering
Preparation and colossal magnetoresistance in a trilayer La0.67Sr0.33MnO3/La0.75MnO3/La0.67Sr0.33MnO3 device by dc magnetron sputtering
复制标题
直流磁控溅射三层La0.67Sr0.33MnO3/La0.75MnO3/La0.67Sr0.33MnO3器件的制备及其巨磁阻
DOI：
10.1016/s0025-5408(02)00717-1
复制
发表时间：
2002
影响因子：
5.4
通讯作者：
Z. G. Zhu
中科院分区：
文献类型：
--
作者：
Honglin Li;Qianfeng Fang;Z. G. Zhu
用直流磁控溅射法在(001)取向的LaAlO_3衬底上制备了La0.67Sr0.33MnO3(LSMO)/La0.75MnO3(L0.75MO)/La0.67Sr0.33MnO3(LSMO)外延三层膜。对其结构和磁流变特性进行了研究。所有沉积的三层膜在116-185K的温度范围内都表现出半导体到金属的转变。MR还显示出依赖于中间氧化层的厚度。对于LSMO(300 Nm)/L0.75MO(70 Nm)/LSMO(300 Nm)三层膜，在132K、0.4T磁场下获得了最大的磁阻值(ΔR/R0)为32%。三层膜的磁阻优于LSMO和L0.75MO单层膜。
Epitaxial trilayer films of La0.67Sr0.33MnO3(LSMO)/La0.75MnO3(L0.75MO)/La0.67Sr0.33MnO3(LSMO) have been prepared on (001) oriented LaAlO3substrates by dc magnetron sputtering. The structure and MR are studied. All as-deposited trilayer films exhibit a semiconductor to metal transition at temperature ranging from 116 to 185K. The MR is also shown to be dependent on the thickness of the middle oxide layer. A maximum MR value of 32% (ΔR/R0) has been obtained at 132K under 0.4T magnetic field for a LSMO (300nm)/L0.75MO (70nm)/LSMO (300nm) trilayer film. The MR of trilayer film prefers to that of both LSMO and L0.75MO single layer films.