Understanding the impact of interface reaction on dipole strength at MgO/SiO2 and Y2O3/SiO2 interfaces
Understanding the impact of interface reaction on dipole strength at MgO/SiO2 and Y2O3/SiO2 interfaces
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DOI：
10.7567/jjap.55.04eb11
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发表时间：
2016-03
影响因子：
1.5
通讯作者：
J. Fei;K. Kita
中科院分区：
文献类型：
--
作者：
J. Fei;K. Kita
我们研究了改变退火温度时 MgO/SiO2 和 Y2O3/SiO2 界面负偶极子强度的变化。硅酸盐形成后观察到负偶极子强度降低。我们发现，对于化学反应体系，界面处的反应性是高 k/SiO2 界面偶极子层形成的主导因素之一，其中阳离子迁移应被视为偶极子层形成的驱动力。
We investigated the variation in negative dipole strength at MgO/SiO2 and Y2O3/SiO2 interfaces when changing the annealing temperature. The reduction in negative dipole strength was observed after silicate formation. We found that the reactivity at the interfaces is one of the dominant factors of dipole layer formation at high-k/SiO2 interfaces for chemically reactive systems where cation migration should be taken into account as the driving force of the dipole layer formation.