Radiation-induced dark current increases in CCDs
Radiation-induced dark current increases in CCDs
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DOI：
10.1109/radecs.1993.316569
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发表时间：
1993-09
期刊：
影响因子：
--
通讯作者：
G. Hopkinson
中科院分区：
文献类型：
--
作者：
G. Hopkinson
Results are presented on ionization and displacement damage-induced dark current increases in CCDs. Effects of reverse annealing and operation in surface inversion (dither clocking and MPP mode) are discussed. Bulk damage effects such as field enhancement and random telegraph noise are also considered. The emphasis is on effects in the near-Earth space environment.>
