Electron affinity at aluminum nitride surfaces
Electron affinity at aluminum nitride surfaces
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DOI：
10.1063/1.122158
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发表时间：
1998-10
影响因子：
4
通讯作者：
Chih‐I Wu;A. Kahn;E. Hellman;D. Buchanan
中科院分区：
文献类型：
--
作者：
Chih‐I Wu;A. Kahn;E. Hellman;D. Buchanan
We investigate the electron affinity of aluminum nitride surfaces prepared by nitrogen sputtering and annealing via x-ray, ultraviolet, and inverse photoemission spectroscopy. The combination of these techniques leads to a precise determination of the relative positions of the Fermi level, valence-band maximum, conduction-band minimum, and vacuum level at the semiconductor surface. We demonstrate that, in spite of the presence of a sharp photoemission onset feature previously associated with negative electron affinity, the electron affinity is clearly positive on these surfaces.
