Preparation and Characterization of Electrochemically Deposited Silicon Films in Ionic Liquid from Polysilicon Byproduct SiCl4
Preparation and Characterization of Electrochemically Deposited Silicon Films in Ionic Liquid from Polysilicon Byproduct SiCl4
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多晶硅副产物 SiCl4 在离子液体中电化学沉积硅薄膜的制备及表征
DOI：
10.20964/2018.09.51
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发表时间：
2018-09
期刊：
影响因子：
--
通讯作者：
Chenglong Zhang
中科院分区：
文献类型：
--
作者：
Zhanxia Zhao;Jingjing Liu;Chenglong Zhang
采用三电极系统，在SiCl 4基离子液体电解液（[BMIM] Tf 2N）中，在避免高温和复杂操作的恒电位电解条件下，在钛板上电沉积硅膜。通过拉曼光谱法研究了不同沉积温度（室温、35°C、45°C和55°C）和电解质质量比（[BMIM] Tf 2N：碳酸亚丙酯[PC]=1：1、1：2、1：3、1：4）下沉积的Si膜的微观结构。拉曼光谱证实沉积的Si膜为非晶态。通过扫描电子显微镜（SEM）研究了表面形貌。拉曼光谱和扫描电镜结果表明，在室温下以质量比1：3沉积的薄膜具有最佳的微观结构和表面形貌。能量色散X射线光谱法用于测量Si元素含量。在室温下，当电解液质量比为1：3时，通过改变沉积时间（1 ~ 4 h），研究了Si薄膜的光学和电学性能。结果表明，薄膜在1135 nm处有较强的光致发光峰，Si/Ti结的电流-电压曲线在1h时有明显的整流行为，表明薄膜具有良好的导电性。
Silicon films were electrodeposited on a titanium plate by using a three-electrode system in a SiCl4based ionic liquid electrolyte ([BMIM]Tf2N) under potentiostatic electrolysis conditions avoiding high temperature and a complex operation process. The microstructure of the deposited Si films was studied by Raman spectroscopy for varying deposition temperatures (room temperature, 35°C, 45°C, and 55°C) and electrolyte mass ratios ([BMIM]Tf2N: propylene carbonate[PC]=1:1, 1:2, 1:3, 1:4). Raman spectra confirmed that the deposited Si films were in an amorphous state. The surface topography was studied by scanning electron microscopy (SEM). Results from Raman spectroscopy and SEM showed that films deposited at room temperature with a mass ratio of 1:3 show the best microstructure and surface topography. Energy dispersive X-ray spectroscopy was used to measure the Si elemental content. The optical and electrical properties of the as-deposited Si films were also investigated by varying the deposition time from 1h to 4h for an electrolyte mass ratio of 1:3 at room temperature. The results indicated that the films exhibit a relatively strong photoluminescence peak at a wavelength of approximately 1135nm and that the current-voltage curves for the Si/Ti junction show an evident rectifying behavior for a deposition time of 1h, which indicates that the deposited Si films have good electrical conductivity.
DOI：
10.1136/bmj.323.7325.1375/a
发表时间：
2001-12
期刊：
BMJ : British Medical Journal
影响因子：
--
作者：
K. Barraclough
通讯作者：
K. Barraclough