Strain induced magnetic anisotropy in highly epitaxial CoFe2O4 thin films
Strain induced magnetic anisotropy in highly epitaxial CoFe2O4 thin films
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DOI：
10.1063/1.2424444
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发表时间：
2006-12-25
影响因子：
4
通讯作者：
Li, Y. R.
中科院分区：
文献类型：
--
作者：
Huang, W.;Zhu, J.;Li, Y. R.
采用激光分子束外延技术在（001）SrTiO 3和（001）MgO衬底上外延生长了钴铁氧体（CoFe 2 O 4）薄膜。微结构研究表明，在（001）SrTiO 3上压应变生长的CoFe 2 O 4薄膜为c取向岛状生长，表面粗糙;在（001）MgO上拉应变生长的CoFe 2 O 4薄膜为c取向层状生长。磁性能研究表明，在（001）SrTiO 3衬底上制备的CoFe 2 O 4压应变薄膜可以显著提高面外磁化强度（190 emu/cm 3），同时具有较大的矫顽力（3.8 kOe）。而在（001）MgO衬底上的CoFe_2 O_4薄膜则表现出较弱的磁各向异性。这些结果表明，强磁各向异性是高度依赖于晶格失配引起的应变。(c)2006年，美国物理学会。
Cobalt ferrite (CoFe2O4) thin films were epitaxially grown on (001) SrTiO3 and (001) MgO by laser molecular beam epitaxy. Microstructural studies indicate that the CoFe2O4 grown on (001) SrTiO3 with compressive strain are c-oriented island growth mode with rough surface morphology, whereas the films on (001) MgO with tensile strain become c oriented with layer-by-layer mode. Magnetic property studies reveal that the compressive strained CoFe2O4 films on (001) SrTiO3 can significantly enhance out-of-plane magnetization (190 emu/cm(3)) with a large coercivity (3.8 kOe). In contrast, the tensile strained CoFe2O4 films on (001) MgO exhibit weak magnetic anisotropy. These results suggest that strong magnetic anisotropy is highly dependent on the lattice mismatch induced strain. (c) 2006 American Institute of Physics.