The Formation Mechanism of Aluminum Nanodots by Inhomogeneous Anodization as a Self-Alignment Technique for a Room-Temperature Operating Single-Electron Transistor (Invited)
The Formation Mechanism of Aluminum Nanodots by Inhomogeneous Anodization as a Self-Alignment Technique for a Room-Temperature Operating Single-Electron Transistor (Invited)
复制标题
室温工作单电子晶体管自对准非均匀阳极氧化铝纳米点的形成机制（特邀）
DOI：
--
复制
发表时间：
2008
期刊：
影响因子：
--
通讯作者：
and M. Niwano
中科院分区：
文献类型：
--
作者：
T. Muto;Y. Kimura;and M. Niwano
