Atomic structure of conducting nanofilaments in TiO2 resistive switching memory
Atomic structure of conducting nanofilaments in TiO2 resistive switching memory
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DOI：
10.1038/nnano.2009.456
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发表时间：
2010-02-01
影响因子：
38.3
通讯作者：
Hwang, Cheol Seong
中科院分区：
文献类型：
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作者：
Kwon, Deok-Hwang;Kim, Kyung Min;Hwang, Cheol Seong
金属氧化物中的电阻开关可能成为下一代非易失性存储器的基础。有人认为，在几个技术相关的氧化物材料的高导电性状态下的电流流过局部灯丝，但这些灯丝的特点是只有间接的，限制了我们的开关机制的理解。在这里，我们使用高分辨率的透射电子显微镜直接探测在电阻开关过程中的Pt/TiO 2/Pt系统中的纳米丝。原位电流-电压和低温（类似于130 K）电导率测量证实，开关发生的形成和中断的TinO 2n-1（或所谓的Magneli相）丝。这些细丝的组成、结构和尺寸的知识将为解开氧化物薄膜中电阻切换的完整机制提供基础，并有助于指导对此类薄膜应用的稳定性和可扩展性的研究。
Resistance switching in metal oxides could form the basis for next-generation non-volatile memory. It has been argued that the current in the high-conductivity state of several technologically relevant oxide materials flows through localized filaments, but these filaments have been characterized only indirectly, limiting our understanding of the switching mechanism. Here, we use high-resolution transmission electron microscopy to probe directly the nanofilaments in a Pt/TiO2/Pt system during resistive switching. In situ current-voltage and low-temperature (similar to 130 K) conductivity measurements confirm that switching occurs by the formation and disruption of TinO2n-1 (or so-called Magneli phase) filaments. Knowledge of the composition, structure and dimensions of these filaments will provide a foundation for unravelling the full mechanism of resistance switching in oxide thin films, and help guide research into the stability and scalability of such films for applications.