Schottky-quantum dot photovoltaics for efficient infrared power conversion
Schottky-quantum dot photovoltaics for efficient infrared power conversion
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DOI：
10.1063/1.2912340
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发表时间：
2008-04-14
影响因子：
4
通讯作者：
Sargent, Edward H.
中科院分区：
文献类型：
--
作者：
Johnston, Keith W.;Pattantyus-Abraham, Andras G.;Sargent, Edward H.
采用溶液处理的硫化铅纳米晶量子点薄膜，并结合铝和氧化铟锡接触电极制备了平面肖特基光电器件。这些器件展现出高达4.2%的红外功率转换效率，比之前的结果提高了三倍。太阳能功率转换效率达到1.8%。这种简单且优化的结构可直接应用于多结光电器件配置中。（C）2008美国物理学会
Planar Schottky photovoltaic devices were prepared from solution-processed PbS nanocrystal quantum dot films with aluminum and indium tin oxide contacts. These devices exhibited up to 4.2% infrared power conversion efficiency, which is a threefold improvement over previous results. Solar power conversion efficiency reached 1.8%. The simple, optimized architecture allows for direct implementation in multijunction photovoltaic device configurations. (C) 2008 American Institute of Physics.