Short-Term Memory to Long-Term Memory Transition in a Nanoscale Memristor
Short-Term Memory to Long-Term Memory Transition in a Nanoscale Memristor
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DOI：
10.1021/nn202983n
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发表时间：
2011-09-01
期刊：
影响因子：
17.1
通讯作者：
Lu, Wei
中科院分区：
文献类型：
--
作者：
Chang, Ting;Jo, Sung-Hyun;Lu, Wei
在生物系统中，“记忆”是学习和决策的重要组成部分。与现代半导体存储设备不同，不用说，人类的记忆绝不是永恒的。然而，健忘并不总是不利的，因为它释放了记忆存储更重要或更频繁访问的信息片段，并被认为是个人适应新环境所必需的。最终，只有那些有意义的记忆才能通过反复刺激从短期记忆转化为长期记忆。在这项研究中，我们通过实验表明，在纳米级忆阻器设备的保留损失具有惊人的相似之处，在生物系统中的记忆丧失。通过用重复的电压脉冲刺激忆阻器，我们观察到类似于生物系统中的记忆转变的效果，其具有大大改善的保留时间，伴随着忆阻器中的额外结构变化。我们验证了不仅刺激的形状或总数是有影响的，而且刺激脉冲之间的时间间隔（即，刺激速率）在确定过渡的有效性中起着关键作用。从杂质再分布的微观图像解释了忆阻器器件的记忆增强和转变，并且可以用控制生物记忆的相同方程定性地描述。
"Memory" is an essential building block in learning and decision-making, in biological systems. Unlike modern semiconductor memory devices, needless to say, human memory is by no means eternal. Yet, forgetfulness is not always as disadvantage since it releases memory storage for more important or more frequently accessed pieces of information and is thought to be necessary for individuals to adapt to new environments. Eventually, only memories that are of significance are transformed from short-term memory into long-term memory through repeated stimulation. In this study, we show experimentally that the retention loss in a nanoscale memristor device bears striking resemblance to memory loss in biological systems. By stimulating the memristor with repeated voltage pulses, we observe an effect analogous to memory transition in biological systems with much improved retention time accompanied by additional structural changes in the memristor. We verify that not only the shape or the total number of stimuli is influential, but also the time Interval between stimulation pulses (i.e., the stimulation rate) plays a, crucial role in determining the effectiveness of the transition. The memory enhancement and transition of the memristor device was explained from the microscopic picture of impurity redistribution and can be qualitatively described by the same equations governing biological memories.