Development of n-on-p silicon sensors for very high radiation environments
Development of n-on-p silicon sensors for very high radiation environments
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DOI：
10.1016/j.nima.2010.04.080
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发表时间：
2011-04-21
影响因子：
1.4
通讯作者：
Yamamura, K.
中科院分区：
文献类型：
--
作者：
Unno, Y.;Affolder, A. A.;Yamamura, K.
我们开发了一种新型的、高辐射耐受性的n-In-p硅微带传感器，适用于超大强子对撞机等高辐射环境。该传感器的设计通量为1×10(15)NEQ/cm(2)，由P型、FZ、6英寸材料制成。(150 Mm)晶片，我们在其上放置一个9.75 cm x 9.75 cm大面积传感器和几个带有各种n带隔离结构的1 cm x 1 cm微型传感器。通过对质子和中子辐照前后传感器的评估，我们发现完全耗尽电压演化到大约800V，并且n带隔离依赖于p(+)浓度。此外，我们还对带间电阻、带间电容和穿透保护(PTP)电压进行了表征。第一批制造使我们能够识别PTP和立体声条带布局中的薄弱环节。通过了解弱点的来源，面具进行了相应的修改。经过改进，后续制造批次和最新制造的大约30个主传感器和相关微型传感器表现出良好的性能，在1000V以下没有微放电迹象。(C)2010 Elsevier B.V.保留所有权利。
We have developed a novel and highly radiation-tolerant n-in-p silicon microstrip sensor for very high radiation environments such as in the Super Large Hadron Collider. The sensors are designed for a fluence of 1 x 10(15) neq/cm(2) and are fabricated from p-type, FZ, 6 in. (150 mm) wafers onto which we lay out a single 9.75 cm x 9.75 cm large-area sensor and several 1 cm x 1 cm miniature sensors with various n-strip isolation structures. By evaluating the sensors both pre- and post-irradiation by protons and neutrons, we find that the full depletion voltage evolves to approximately 800 V and that the n-strip isolation depends on the p(+) concentration. In addition, we characterize the interstrip resistance, interstrip capacitance and the punch-through-protection (PTP) voltage. The first fabrication batch allowed us to identify the weak spots in the PTP and the stereo strip layouts. By understanding the source of the weakness, the mask was modified accordingly. After modification, the follow-up fabrication batches and the latest fabrication of about 30 main sensors and associated miniature sensors have shown good performance, with no sign of microdischarge up to 1000 V. (C) 2010 Elsevier B.V. All rights reserved.