Sb-mediated growth of high-density InAs quantum dots and GaAsSb embedding growth by MBE
Sb-mediated growth of high-density InAs quantum dots and GaAsSb embedding growth by MBE
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DOI：
10.1016/j.apsusc.2008.03.017
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发表时间：
2007-05
期刊：
影响因子：
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通讯作者：
N. Kakuda;T. Yoshida;K. Yamaguchi
中科院分区：
文献类型：
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作者：
N. Kakuda;T. Yoshida;K. Yamaguchi
采用Sb介导的分子束外延技术，以GaAsSb/GaAs为缓冲层，InAsSb为浸润层，在GaAs（001）衬底上生长了高密度的InAs量子点。在这种Sb介导的生长中，在这些WL表面上形成了许多二维（2D）小岛。这些2D岛提供高台阶密度并抑制表面迁移。结果，实现了高密度InAs量子点，并且光致发光（PL）强度增加。此外，通过引入GaAsSb覆盖层（CL），获得了比InGaAs CL更高的室温PL强度。
Self-assembled InAs quantum dots (QDs) with high-density were grown on GaAs(001) substrates by antimony (Sb)-mediated molecular beam epitaxy technique using GaAsSb/GaAs buffer layer and InAsSb wetting layer (WL). In this Sb-mediated growth, many two-dimensional (2D) small islands were formed on those WL surfaces. These 2D islands provide high step density and suppress surface migration. As the results, high-density InAs QDs were achieved, and photoluminescence (PL) intensity increased. Furthermore, by introducing GaAsSb capping layer (CL), higher PL intensity at room temperature was obtained as compared with that InGaAs CL.