Improvement in Mobility and Stability of n-Type Organic Field-Effect Transistors with a Hole Transporting Interfacial Layer
Improvement in Mobility and Stability of n-Type Organic Field-Effect Transistors with a Hole Transporting Interfacial Layer
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DOI：
10.1143/apex.2.021501
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发表时间：
2009-02
影响因子：
2.3
通讯作者：
K. Nakayama;Motomi Ishikawa;M. Yokoyama
中科院分区：
文献类型：
--
作者：
K. Nakayama;Motomi Ishikawa;M. Yokoyama
当有机发光二极管中使用的空穴传输层插入栅极绝缘体和沟道层之间时，N,N'-二辛基-3,4,9,10-苝四甲二酰亚胺（PTCDI-C8H）的场效应电子迁移率和稳定性得到改善。该结果表明，与获得惰性表面的传统表面处理相比，插入有机半导体的电子活性界面层在消除绝缘体表面的电子陷阱方面更有效。
Field-effect electron mobility and stability of N,N'-dioctyl-3,4,9,10-perylene tetracarboxylic diimide (PTCDI-C8H) improved when a hole-transporting layer, used in organic light-emitting diodes, was inserted between the gate insulator and the channel layer. This result suggests that insertion of an electronically active interfacial layer of an organic semiconductor is more effective in eliminating electron traps of the insulator surface compared to conventional surface treatment to obtain an inert surface.