Preparation and characterization of CuAlO2 transparent thin films prepared by chemical solution deposition method

Preparation and characterization of CuAlO2 transparent thin films prepared by chemical solution deposition method
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DOI:
10.1007/s10971-009-2143-7
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发表时间:
2010-01
影响因子:
2.5
通讯作者:
Gang Li;Xuebin Zhu;H. Lei;Haifeng Jiang;W. Song;Zhaorong Yang;J. Dai;Yuping Sun;Xu Pan;Songyuan Dai
Gang Li;Xuebin Zhu;H. Lei;Haifeng Jiang;W. Song;Zhaorong Yang;J. Dai;Yuping Sun;Xu Pan;Songyuan Dai
中科院分区:
材料科学3区
文献类型:
--
作者:
Gang Li;Xuebin Zhu;H. Lei;Haifeng Jiang;W. Song;Zhaorong Yang;J. Dai;Yuping Sun;Xu Pan;Songyuan Dai

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以一水乙酸铜、非水合硝酸铝和2-甲氧基乙醇为起始原料和溶剂,采用化学溶液沉积法在石英玻璃和蓝宝石衬底上制备了CuAlO2薄膜。研究了热处理温度对薄膜的结构、形貌、电学和光学性能的影响。通过优化的热处理条件,在常压下氮气流量为400sccm、温度为850C的条件下,CuAlO2薄膜具有最好的性能,其室温电阻率最低,为3.6x10~2Ω/cm,在可见光范围内的透过率最高(约600sccm,透过率为70%)。当热处理温度低于850℃时,得到的是CuAl2O4和CuO相,而不是CuAlO2相。然而,当热处理温度超过850℃时,CuAlO2薄膜的结晶质量减弱,表面形貌恶化,导致薄膜的电阻率增加,可见光区透过率降低。
CuAlO2thin films were prepared on quartz glass and sapphire substrates by chemical solution deposition method using copper acetate monohydrate, aluminum nitrate nonahydrate and 2-methoxyethanol as starting precursor and solvent. The effects of annealing temperature on the structural, morphological, electrical and optical properties have been studied. Via the optimized annealing treatment condition, CuAlO2film annealed at 850 °C in nitrogen flow of 400sccm under atmosphere pressure exhibits the best performance with the lowest room temperature resistivity of 3.6 × 102Ω cm and the highest optical transmission in the visible region (>70% at around 600 nm wavelength). CuAl2O4and CuO phases, not CuAlO2phase are obtained when annealing temperature is lower than 850 °C. However, a further increase of annealing temperature weakens the crystallization quality and deteriorates the surface morphology of CuAlO2films as the annealing temperature exceeds 850 °C, leading to an increase in the resistivity and a decrease of the optical transmission in the visible region of CuAlO2films.