SHARP-LINE PHOTOLUMINESCENCE AND 2-PHOTON ABSORPTION OF ZERO-DIMENSIONAL BIEXCITONS IN A GAAS/ALGAAS STRUCTURE
SHARP-LINE PHOTOLUMINESCENCE AND 2-PHOTON ABSORPTION OF ZERO-DIMENSIONAL BIEXCITONS IN A GAAS/ALGAAS STRUCTURE
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DOI：
10.1103/physrevlett.73.1138
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发表时间：
1994-08-22
影响因子：
8.6
通讯作者：
WEIMANN, G
中科院分区：
文献类型：
--
作者：
BRUNNER, K;ABSTREITER, G;WEIMANN, G
利用微米级光致发光探针研究了薄GaAs/AlGaAs量子阱中的单岛状界面缺陷。束缚激子基态局部发射明显的尖锐线。随着该量子点能级的激发增加，在较低能量下出现额外的跃迁线。它们归因于局域双激子态。双激子相关能约为4 meV。在光致发光激发光谱中观察到双激子基态的一个明显的双光子共振吸收峰。它的线宽只有30 μ eV左右。基于离散能级方案和泡利不相容原理讨论了它们的光谱和偏振特性。
Using a micron-sized photoluminescence (PL) probe enables us to study single islandlike interface defects of a thin GaAs/AlGaAs quantum well. The bound exciton ground state locally emits a distinct sharp line. With increasing excitation of this quantum dot level additional transition lines emerge at lower energy. They are attributed to localized biexciton states. The biexciton correlation energy is about 4 meV. A distinct two-photon resonant absorption peak of the biexciton ground state is observed in PL excitation spectroscopy. Its linewidth is only about 30 mueV. The spectra and their polarization properties are discussed on the basis of a discrete level scheme and the Pauli exclusion principle.