Surface contrast in two dimensionally nucleated misfit dislocations in InAs/GaAs(110) heteroepitaxy
Surface contrast in two dimensionally nucleated misfit dislocations in InAs/GaAs(110) heteroepitaxy
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DOI：
10.1103/physrevlett.78.475
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发表时间：
1997-01-20
影响因子：
8.6
通讯作者：
Joyce, BA
中科院分区：
文献类型：
--
作者：
Belk, JG;Sudijono, JL;Joyce, BA
用扫描隧道显微镜研究了GaAs（110）衬底上生长的InAs薄膜中失配位错（MD）引起的外延层晶格畸变。在前两个单层中观察到具有规则尺寸的二维（2D）岛。在图像中由黑线阵列识别的界面MD出现在2D岛的聚结之后。生长模式保持2D的所有覆盖率和这些线的垂直对比度降低：薄膜厚度。如果考虑InAs薄膜表面暴露的性质，表面反差只能用经典弹性理论来解释。
Scanning tunneling microscopy has been used to study misfit-dislocation (MD) induced lattice distortion of the epilayer for InAs thin films grown on GaAs(110). Two-dimensional (2D) islands with regular size are observed in the first two monolayers. Interfacial MDs, identified in the images by an array of dark lines, appear following the coalescence of the 2D islands. The growth mode remains 2D for all coverages and the vertical contrast of these Lines decreases with: film thickness. The surface contrast can be explained only by classical elasticity theory if the properties of a thin InAs film with an exposed surface are considered.