Room-temperature intense 320 nm band ultraviolet emission from quaternary InAlGaN-based multiple-quantum wells
Room-temperature intense 320 nm band ultraviolet emission from quaternary InAlGaN-based multiple-quantum wells
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DOI：
10.1063/1.1456951
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发表时间：
2002-02
影响因子：
4
通讯作者：
H. Hirayama;Yasushi Enomoto;A. Kinoshita;A. Hirata;Y. Aoyagi
中科院分区：
文献类型：
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作者：
H. Hirayama;Yasushi Enomoto;A. Kinoshita;A. Hirata;Y. Aoyagi
利用金属有机气相外延技术在SiC上制备了Inx1Aly1Ga1−x1−y1N/Inx2Aly2Ga1−x2−y2N多量子阱（mqw），并在室温（RT）下发射了波长在300-340 nm的强紫外（UV）。我们发现，在AlGaN中加入约5%的In后，紫外辐射显著增强。当量子阱厚度约为1.4 nm时，制备的In0.05Al0.34Ga0.61N/In0.02Al0.60Ga0.38N三层量子阱在318 nm处的发射效率最高。inalgan基QW的320 nm波段发射强度与ingan基QW的410 nm波段发射强度相同。我们在Inx1Aly1Ga1−x1−y1N/Inx2Aly2Ga1−x2−y2N单QW的阴极发光图像中观察到亚微米尺寸的发射波动，这可能是由于in偏析效应造成的。与GaN或algan基量子阱相比，inalgan基量子阱的光致发光对温度的依赖性大大提高。
We demonstrated room-temperature (RT) intense ultraviolet (UV) emission with wavelength in the range of 300–340 nm from Inx1Aly1Ga1−x1−y1N/Inx2Aly2Ga1−x2−y2N multiple-quantum wells (MQWs) fabricated on SiC by metalorganic vapor phase epitaxy. We found that the UV emission is considerably enhanced upon introducing approximately 5% of In into AlGaN. Maximally efficient emission was obtained at 318 nm from the fabricated In0.05Al0.34Ga0.61N/In0.02Al0.60Ga0.38N three-layer MQW when the QW thickness was approximately 1.4 nm. The intensity of 320 nm band emission from the InAlGaN-based MQWs was as strong as that of 410 nm band emission from InGaN-based QWs at RT. We observed emission fluctuations of submicron size in cathode luminescence images of Inx1Aly1Ga1−x1−y1N/Inx2Aly2Ga1−x2−y2N single QW which might be due to In segregation effect. The temperature dependence of photoluminescence emission for InAlGaN-based QWs was greatly improved in comparison with that of GaN- or AlGaN-based QWs.