Thermal analysis of GaN‐based laser diode package
Thermal analysis of GaN‐based laser diode package
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DOI：
10.1002/pssc.200565170
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发表时间：
2006-06
期刊：
影响因子：
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通讯作者：
W. J. Hwang;T. Lee;O. Nam;H. Kim;J. Kwak;Yu-Sun Park;M. Shin
中科院分区：
文献类型：
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作者：
W. J. Hwang;T. Lee;O. Nam;H. Kim;J. Kwak;Yu-Sun Park;M. Shin
本文研究了GaN基半导体激光器（LD）封装的热行为与冷却系统、芯片粘接材料和芯片加载条件的关系。热阻和结温用电热瞬态法测定。在自然冷却条件下，由于热传导系数h随温度的变化很敏感，因此热阻随输入电流的变化很明显。在LD封装的热行为方面，PbSn作为管芯附着物的使用比Ag膏更有利。比较了上下外延结构的LD封装的热阻。从结到热沉的部分热阻对于下外延结构为4.68 K/W，而对于上外延结构为9.65 K/W。结果表明，LD封装的总热阻主要由封装设计而不是芯片结构本身控制。（© 2006 WILEY-VCH Verlag GmbH & Co. KGaA，魏因海姆）
This paper reports on the thermal behavior of GaN-based laser diode (LD) package as functions of cool-ing systems, die attaching materials, and chip loading conditions. Thermal resistance and junction tem-perature was determined by electrical-thermal transient method. Significant change of thermal resistance with input current was observed under natural cooling condition due to the sensitive change of heat trans-fer coefficient (h ) with temperature. Employment of PbSn as a die attachment was more advantageous over Ag-paste in thermal behavior of LD package. Compare the thermal resistance of LD packages epi-down and epi-up structures. The partial thermal resistance from junction to submount is 4.68 K/W for epi-down structure, and 9.65 K/W to epi-up structure. The results demonstrate that the total thermal resistance of LD package be controlled mainly by the packaging design rather than the chip structure itself. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)