Ab Initio Transport Calculations for Single-Atom Copper Junctions in the Presence of Hydrogen Chloride

Ab Initio Transport Calculations for Single-Atom Copper Junctions in the Presence of Hydrogen Chloride
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氯化氢存在下单原子铜结的从头算输运计算

DOI:
10.1021/jp5093898
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发表时间:
2014
影响因子:
3.7
通讯作者:
F. Evers
F. Evers
中科院分区:
化学3区
文献类型:
--
作者:
P. Schnäbele;R. Korytár;A. Bagrets;T. Roman;T. Schimmel;A. Gross;F. Evers

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我们研究了单原子厚度的铜导线在含HCl的电化学溶剂中的输运性质。作为第一步,我们研究了在隐式电化学环境中氢与氯在Cu(111)表面共吸附的稳定性。我们发现,加入氢的Cl-覆盖的铜表面是积极不利的。结果作为一个估计的氯原子的数量吸附在单原子线附近。我们用它来构建模型结(铜导线加上吸附),电子输运性质,我们调查与密度泛函理论。我们发现,Cl和H吸附倾向于耗尽费米能附近的Cu线的态密度。因此,传输减少。有趣的是,我们观察到,在H-吸附的情况下,耗尽的量是相当敏感的线的几何形状(松弛与非松弛),但这不是与Cl的情况。
We study the transport properties of single-atom-thick Cu wires submerged in an electrochemical solvent containing HCl. As a first step, we investigate the stability of hydrogen coadsorbing with chlorine on the Cu(111) surface in an implicit electrochemical environment. We find that adding hydrogen to a Cl-covered Cu surface is energetically unfavorable. The result serves as an estimate for the number of Cl atoms that adsorb near the single-atom wire. We use it to construct model junctions (Cu wire plus adsorbates), the electron transport properties of which we investigate with density functional theory. We find that the Cl and H adsorbates tend to deplete the density of states of the Cu wire near the Fermi energy. As a consequence, the transmission is reduced. Interestingly, we observe that in the case of H-adsorption, the amount of depletion is quite sensitive to the wire geometry (relaxed vs unrelaxed), but this is not the case with Cl.
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