Growth and characterization of AlInGaN quaternary alloys
Growth and characterization of AlInGaN quaternary alloys
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AlInGaN 四元合金的生长和表征
DOI：
10.1063/1.116749
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发表时间：
1996
影响因子：
4
通讯作者：
N. El
中科院分区：
文献类型：
--
作者：
F. G. McIntosh;K. Boutros;J. Roberts;S. Bedair;E. Piner;N. El
本文报道了在（0<y<0.15）和（0<x<0.14）组分范围内用金属有机化学气相沉积法制备AlyInxGa1−x−yN薄膜。AlInGaN四元合金为InGaN基发光异质结构器件提供了晶格匹配的平台。在（0001）蓝宝石衬底上，在750 °C下实现了AlInGaN的外延生长。通过能量色散谱、X射线衍射和室温PL获得合金成分、晶格常数和带隙。这些四元薄膜的PL谱主要是带边发射。初步的数据表明，AlInGaN的晶格常数可以推导出从化学成分使用Vegard定律，表明在生长的四元薄膜的固溶体。
We report on the deposition of AlyInxGa1−x−yN in the (0<y<0.15) and (0<x<0.14) composition range by metalorganic chemical vapor deposition. AlInGaN quaternary alloys offer a lattice‐matched platform for InGaN‐based light emitting heterostructure devices. Epitaxial growth of AlInGaN on (0001) sapphire substrates has been achieved at 750 °C. Alloy composition, lattice constants, and band gaps were obtained by energy dispersive spectroscopy, x‐ray diffraction, and room temperature PL. Band edge emissions dominate the PL spectra of these quaternary films. Preliminary data suggest that the lattice constant of AlInGaN can be deduced from chemical composition using Vegard’s law, indicating solid solution in the grown quaternary films.