Memristors with organic‐inorganic halide perovskites
Memristors with organic‐inorganic halide perovskites
复制标题
有机-无机卤化物钙钛矿忆阻器
DOI:
10.1002/inf2.12012
复制
发表时间:
2019
期刊:
影响因子:
22.7
通讯作者:
Yichun Liu
中科院分区:
文献类型:
--
作者:
Xiaoning Zhao;Haiyang Xu;Zhongqiang Wang;Ya Lin;Yichun Liu
Organic‐inorganic halide perovskites (OHPs) have been intensively studied for application in solar cells with high conversion efficiency exceeding 22%. The unique electrical and optical properties of OHPs have led to their use in optoelectronic device applications beyond photovoltaics, such as light‐emitting diodes, photodetectors, transistors. New information storage technologies and computing architectures are being researched extensively with the aim of addressing the growing challenge of approaching end of Moore's law and von Neumann bottleneck. As the fourth basic circuit element, memristor is a leading candidate with powerful capabilities in information storage and neuromorphic computing applications. Recently, OHPs have received growing attention as promising materials for memristors. In particular, their mixed ionic‐electronic conduction ability paired with light sensitivity provide OHPs with the opportunity to display novel functions such as optical‐erase memory, optogenetics‐inspired synaptic functions, and light‐accelerated learning capability. This review covers recent advances in OHP‐based memristors development including memristive mechanism and analytical models, universal memristive characteristics for memory and neuromorphic computing applications, and novel multi‐functionalization. Challenges and future prospects of OHP‐based memristors are also discussed.