Photoemission of Electrons fromn-Type Degenerate Silicon into Silicon Dioxide
Photoemission of Electrons fromn-Type Degenerate Silicon into Silicon Dioxide
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DOI：
10.1103/physrev.152.785
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发表时间：
1966-12
期刊：
影响因子：
--
通讯作者：
A. Goodman
中科院分区：
文献类型：
--
作者：
A. Goodman
从n型强简并硅（10 - 26电子/米3）的导带和价带的电子到热生长的二氧化硅层的光致发射已被观察到。阈值能量已被确定为两个过程，并用于获得以下信息的能量在硅-二氧化硅界面。硅中的导带边缘与氧化物中的导带边缘之间的能量差为1.329 eV。硅中的价带边缘和氧化物中的导带边缘之间的能量差为1.42eV。这些值之间的差异小于通常归因于轻掺杂硅的光学带隙。
Photoemission of electrons from both the conduction and valence bands of n-type strongly degenerate silicon (10 26 electrons/m 3) into thermally grown silicon dioxide layers has been observed. The threshold energies have been determined for the two processes and are used to obtain the following information about energies at the silicon-silicon dioxide interface. The energy difference between the conduction-band edge in the silicon and that in the oxide is∼ 3.29 eV. The energy difference between the valence-band edge in the silicon and the conduction-band edge in the oxide is∼ 4.22 eV. The difference between these values is less than the optical band gap usually attributed to lightly doped silicon.