Simulation of a ridge-type semiconductor laser with horizontal coupling of lateral modes
Simulation of a ridge-type semiconductor laser with horizontal coupling of lateral modes
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DOI：
10.1007/s11082-013-9821-y
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发表时间：
2014-10-01
影响因子：
3
通讯作者：
Numai, Takahiro
中科院分区：
文献类型：
--
作者：
Chai, Guowei;Numai, Takahiro
提出了一种横模水平耦合的脊型半导体激光器，并对其激射特性进行了数值模拟。在梅萨的中心形成凹槽，并且激光束的横向模式由形成在梅萨中的两个脊限定的横向模式的耦合决定。随着沟槽深度的增加，工作在基横模的光输出增强，阈值电流减小。当槽的深度为且槽的宽度为1.98时，直到2A的注入电流都不出现扭结。
A ridge-type semiconductor laser with horizontal coupling of lateral modes is proposed, and lasing characteristics are simulated. A groove is formed in the center of the mesa, and the lateral modes of the laser beams are determined by the coupling of the lateral modes confined by the two ridges, which are formed in the mesa. With an increase in the depth of the groove, light output operating in the fundamental lateral mode is enhanced and threshold current is decreased. When the depth of the groove is and the width of the groove is 1.98 , the kink does not appear up to the injected current of 2 A.