Transport of runaway and thermal electrons due to magnetic microturbulence
Transport of runaway and thermal electrons due to magnetic microturbulence
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DOI：
10.1063/1.863433
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发表时间：
1981-04
影响因子：
4.6
通讯作者：
H. Mynick;J. Strachan
中科院分区：
文献类型：
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作者：
H. Mynick;J. Strachan
导出了托卡马克中逃逸电子约束与热电子能量约束的比值，其中逃逸电子约束和热电子能量约束都是由沿着随机磁场线的自由流动决定的。逃逸电子的约束增强在高逃逸电子能量由于相位平均超过磁扰动时，逃逸电子漂移表面从磁表面位移。与LT-3、Ormak、PLT、ST和TM-3的实验数据比较表明，磁随机性可以解释逃逸和热电子能量的相对输运率。
The ratio of the runaway electron confinement to thermal electron energy confinement is derived for tokamaks where both processes are determined by free streaming along stochastic magnetic field lines. The runaway electron confinement is enhanced at high runaway electron energies due to phase averaging over the magnetic perturbations when the runaway electron drift surfaces are displaced from the magnetic surfaces. Comparison with experimental data from LT‐3, Ormak, PLT, ST, and TM‐3 indicates that magnetic stochasticity may explain the relative transport rates of runaways and thermal electron energy.