ZnO extended-gate field-effect transistors as pH sensors -: art. no. 143508
ZnO extended-gate field-effect transistors as pH sensors -: art. no. 143508
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DOI：
10.1063/1.2084319
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发表时间：
2005-10-03
影响因子：
4
通讯作者：
Mulato, M
中科院分区：
文献类型：
--
作者：
Batista, PD;Mulato, M
本工作的目的是研究和表征作为pH传感器的氧化锌。我们使用扩展栅场效应晶体管(EGFET)来获得氧化锌对pH的响应。由于溶胶-凝胶法是一种低成本、易制备的方法，因此被用于制备氧化锌薄膜。在150~500℃不同的焙烧温度下得到了氧化锌粉末，并用X射线衍射仪、红外光谱、热重分析和差热分析对样品进行了表征。该薄膜被用作pH传感器(范围2-12)，其灵敏度为38 mV/pH。(C)2005年美国物理研究所。
The objective of this work is the study and characterization of zinc oxide (ZnO) as pH sensor. We used an extended-gate field-effect transistor (EGFET) to obtain the response of ZnO as a function of pH. Sol-gel was used for the production of ZnO films because this is a low cost and easy fabrication procedure. The ZnO powder was obtained at different temperatures of calcination, from 150 up to 500 degrees C. The samples were investigated by x-ray diffraction, infrared spectroscopy, thermogravimetric analysis and differential thermal analysis. The films were investigated as pH sensors (range 2-12) and the ZnO EGFET shows a sensitivity of 38 mV/pH. (C) 2005 American Institute of Physics.