Observation of femtosecond carrier thermalization time in indium nitride
Observation of femtosecond carrier thermalization time in indium nitride
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DOI：
10.1063/1.2940737
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发表时间：
2008-06-15
影响因子：
3.2
通讯作者：
Sun, Chi-Kuang
中科院分区：
文献类型：
--
作者：
Sun, Shih-Ze;Wen, Yu-Chieh;Sun, Chi-Kuang
利用飞秒瞬态透射测量技术研究了电子浓度为3.8 × 10 ~（18）cm ~（-3）的n型氮化铟（InN）中的超快载流子热化过程。观察到一个非常快的载体外部热化时间的数量级为400 fs，这是远远快于所有以前的报告。这个观测到的飞秒热化时间与基于库仑屏蔽效应的预测是一致的。通过波长依赖和功率依赖的研究，即使在400 fs的热化时间，我们没有观察到任何证据的存在的热声子效应，这同意最近的报告，纵向光学声子寿命可以短于300 fs在特定的InN样品。(c)2008年美国物理学会。
Ultrafast carrier thermalization in n-type indium nitride (InN) with an electron concentration of 3.8x10(18) cm(-3) was investigated by femtosecond transient transmission measurements at room temperature with different wavelengths. An extremely fast carrier external thermalization time on the order of 400 fs was observed, which is much faster than all previous reports. This observed femtosecond thermalization time is consistent with a prediction based on a Coulomb screening effect. Through wavelength dependent and power dependent studies, even with a 400 fs thermalization time, we did not observe any evidence of the existence of the hot phonon effect, which agrees with a recent report that a longitudinal optical phonon lifetime could be shorter than 300 fs in specific InN samples. (c) 2008 American Institute of Physics.