Electronic energy states in Si-doped MgO for exoelectron emission
Electronic energy states in Si-doped MgO for exoelectron emission
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用于外激电子发射的硅掺杂 MgO 中的电子能态
DOI：
10.1063/1.3153969
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发表时间：
2009
期刊：
影响因子：
--
通讯作者：
S. Kubo
中科院分区：
文献类型：
--
作者：
S. Ho;S. Nobuki;Norihiro Uemura;Shunsuke Mori;T. Miyake;Kenkichi Suzuki;Y. Mikami;M. Shiiki;S. Kubo
提出了一种确定电子发射源(EES)能态密度的广义解析方法，该方法利用了氧化镁层中电子的热激发和发射模型，并从实验的放电延迟时间随机分布中提取了电子的发射时间常数。当应用于掺硅氧化镁时，由于热激发，从硅EES发出的外电子的发射时间常数在高温和短时间间隔内变短。Si-EES-DSi(E)的能态密度在736 meV处出现主峰，601 meV处有一个附属峰，在586-896 meV范围内有较宽的能级结构。SiEES的有效数目是纯氧化镁的5.5倍。采用对称性自适应团簇组态相互作用方法，得到了具有晶体结构的掺硅氧化镁团簇的激发能为0.83 eV，其中硅EES对外电子发射有贡献。热激发是由..。
A generalized analytical method to determine the density of energy states of electron emission source (EES) is devised by using a thermal excitation and emission model for an exoelectron in the MgO layer and the emission time constants of the exoelectron extracted from experimental stochastic distributions of discharge delay time. When applied to Si-doped MgO, the emission time constant of the exoelectron from the Si EES becomes shorter at high temperature and at short time intervals due to thermal excitation. The density of energy states of the Si EES DSi(E) shows the main peak at 736 meV, a satellite peak at 601 meV, and broad energy structures over the range of 586–896 meV. The effective number of Si EES is 5.5 times larger than that in purified MgO. The excitation energy in a Si-doped MgO cluster with a crystal structure is obtained to be 0.83 eV by using the symmetry-adapted-cluster configuration interaction method and the Si EES contributes to exoelectron emission. The thermal excitation is governed...