Use of SU-8 photoresist-for very high aspect ratio x-ray lithography
Use of SU-8 photoresist-for very high aspect ratio x-ray lithography
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DOI：
10.1016/s0167-9317(00)00363-4
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发表时间：
2000-06-01
影响因子：
2.3
通讯作者：
Peredkov, SS
中科院分区：
文献类型：
--
作者：
Bogdanov, AL;Peredkov, SS
本文介绍了用环氧树脂负性光刻胶SU-8进行深X射线光刻的工艺过程。涂层，软烤，曝光，曝光后烘烤，和抗蚀剂的发展的特点。计算了X射线源光谱对光刻图像对比度的影响，并提出了使用光谱的最佳X射线掩模层组成。报道了在流延步骤中控制抗蚀剂膜厚度的方法。曝光后烘烤的温度极限被发现，以确保安全后烘烤，以获得最大的抗蚀剂灵敏度。提出了优化的显影和冲洗工艺。抗蚀剂结构的纵横比高达100：1（高度：宽度）的证明。
This paper describes the process of deep x-ray lithography using epoxy negative photoresist SU-8. Coating, softbake, exposure, post exposure bake, and development of the resist is characterised. Influence of x-ray source spectrum on the lithographic image contrast is calculated and optimal x-ray mask layers compositions for the spectrum in use are proposed. Method for resist film thickness control during casting step is reported. Temperature limit for the post exposure bake was found to ensure safe post bake to obtain maximum resist sensitivity. Optimised development and rinsing process is presented. Resist structures with aspect ratio as high as 100:1 (height : width) are demonstrated.