Phonon conduction in silicon nanobeams
Phonon conduction in silicon nanobeams
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DOI：
10.1063/1.4983790
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发表时间：
2017-05
影响因子：
4
通讯作者：
Woosung Park;D. D. Shin-D.;S. Kim;Joseph S. Katz;Joonsuk Park;C. Ahn;T. Kodama;M. Asheghi;T. Kenny;K. Goodson
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文献类型：
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作者：
Woosung Park;D. D. Shin-D.;S. Kim;Joseph S. Katz;Joonsuk Park;C. Ahn;T. Kodama;M. Asheghi;T. Kenny;K. Goodson
尽管对硅薄膜中的热传输进行了广泛的研究，但对单晶矩形横截面纳米梁的热导率的研究却很少，这些纳米梁常用于纳米电子学 (FinFET)、纳米机电系统和纳米光子学等许多应用。在这里，我们报告了厚度约为 78 nm、宽度约为 65 nm、170 nm、270 nm、470 nm 和 970 nm 的硅纳米梁的热导率的实验数据。实验数据与热导率模型的预测非常吻合（约 9% 以内），该模型使用从头计算获得的体平均自由程和从动力学理论导出的抑制函数的组合。这项工作量化了纳米束纵横比对热传输的影响，并建立了在研究热传输时区分薄膜和梁的标准。 78 nm × 65 nm 纳米束的热导率为 ∼32 W m−1 K−1，大约是两个小...
Despite extensive studies on thermal transport in thin silicon films, there has been little work studying the thermal conductivity of single-crystal rectangular, cross-sectional nanobeams that are commonly used in many applications such as nanoelectronics (FinFETs), nano-electromechanical systems, and nanophotonics. Here, we report experimental data on the thermal conductivity of silicon nanobeams of a thickness of ∼78 nm and widths of ∼65 nm, 170 nm, 270 nm, 470 nm, and 970 nm. The experimental data agree well (within ∼9%) with the predictions of a thermal conductivity model that uses a combination of bulk mean free paths obtained from ab initio calculations and a suppression function derived from the kinetic theory. This work quantifies the impact of nanobeam aspect ratios on thermal transport and establishes a criterion to differentiate between thin films and beams in studying thermal transport. The thermal conductivity of a 78 nm × 65 nm nanobeam is ∼32 W m−1 K−1, which is roughly a factor of two smal...