Molecular Beam Epitaxy of Co2MnSi Films on Group-IV Semiconductors
Molecular Beam Epitaxy of Co2MnSi Films on Group-IV Semiconductors
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IV 族半导体上 Co2MnSi 薄膜的分子束外延
DOI：
10.7567/jjap.52.04cm06
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发表时间：
2013
影响因子：
1.5
通讯作者：
K. Hamaya
中科院分区：
文献类型：
--
作者：
M. Kawano;S. Yamada;S. Oki;K. Tanikawa;M. Miyao;K. Hamaya
本文研究了用低温分子束外延技术在Si（111）或Ge（111）衬底上外延生长Co_2MnSi薄膜。我们发现，生长的Co2MnSi薄膜由L21有序结构和微晶结构的混合相组成。结果，即使在很低的生长温度下，也可以获得接近理想值一半的磁矩。生长后退火是有效的结晶的微晶相中观察到的生长层，导致磁矩的进一步增强。我们讨论了Co2MnSi和其他Heusler合金在我们以前的工作中检查的生长机制之间的差异。
We explore epitaxial growth of Co2MnSi films on Si(111) or Ge(111) by means of low-temperature molecular beam epitaxy. We find that as-grown Co2MnSi films consist of mixed phases with L21-ordered structures and microcrystalline ones. As a result, the magnetic moment, which is nearly half of the ideal value, can be obtained even at very low growth temperature. Post-growth annealing was effective to crystallize the microcrystalline phases observed in the as-grown layer, leading to a further enhancement in the magnetic moment. We discuss a difference in growth mechanism between Co2MnSi and other Heusler alloys examined in our previous works.