Effects of the Fermi Level on Defects in Be+-Implanted GaAs Studied by a Monoenergetic Positron Beam
Effects of the Fermi Level on Defects in Be+-Implanted GaAs Studied by a Monoenergetic Positron Beam
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单能正电子束研究费米能级对注入GaAs缺陷的影响
DOI：
10.1143/jjap.30.l2002
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发表时间：
1991
影响因子：
1.5
通讯作者：
H. Nakanishi
中科院分区：
文献类型：
--
作者：
A. Uedono;Long Wei;Yasushi Tabuki;H. Kondo;S. Tanigawa;K. Wada;H. Nakanishi
用单能正电子束研究了60keV Be+注入的GaAs(100)中的空位型缺陷。通过测量正电子湮没的多普勒展宽轮廓，得到了n型样品(Si，1×1016Si/cm~3)中空位型缺陷的深度分布。由线形参数S的特征值确定了主要的缺陷物种为双空位，而在p型样品(锌，3×1018锌/厘米~3)中没有观察到这些缺陷。这可以归因于费米能级效应引入的空位型缺陷和间隙Ga原子的复合。
Vacancy-type defects in 60-keV Be+-implanted GaAs(100) were studied by a monoenergetic positron beam. The depth distribution of vacancy-type defects in an n-type specimen (Si, 1×1016 Si/cm3) was obtained from measurements of Doppler broadening profiles of the positron annihilation as a function of incident positron energy. The dominant defect species was identified as a divacancy from the characteristic value of the line-shape parameter S. These defects, however, could not be observed in the p-type specimen (Zn, 3×1018 Zn/cm3). This fact can be attributed to the recombination of vacancy-type defects and interstitial Ga atoms introduced by the Fermi level effect.