As-doped p-type ZnO produced by an evaporation∕sputtering process
As-doped p-type ZnO produced by an evaporation∕sputtering process
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DOI：
10.1063/1.1825615
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发表时间：
2004-12
影响因子：
4
通讯作者：
D. Look;G. Renlund;R. Burgener;J. Sizelove
中科院分区：
文献类型：
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作者：
D. Look;G. Renlund;R. Burgener;J. Sizelove
强p型ZnO是通过以下步骤顺序制备的：（1）在350°C下在熔融石英衬底上蒸发Zn 3As 2;和（2）在保持在450°C下的衬底上溅射ZnO。电特性包括：电阻率为0.4Ωcm，迁移率为4cm 2 scinVs，空穴浓度约为4× 1018 cm −3。该电阻率是有史以来报道的p型ZnO的最佳（最低）电阻率之一。二次离子质谱分析得出砷的平均浓度约为5× 1019 cm −3，而温度依赖迁移率曲线的简单单带拟合得出受主浓度约为9× 1019 cm −3。这有力地证明了p型掺杂剂中含有As，尽管还不清楚受主是简单的阿索还是最近提出的AsZn− 2 VZn。
Strongly p-type ZnO is produced by the following sequence of steps: (1) evaporation of Zn3As2 on a fused-quartz substrate at 350°C; and (2) sputtering of ZnO with substrate held at 450°C. The electrical characteristics include: resistivity of 0.4Ωcm, a mobility of 4cm2∕Vs, and a hole concentration of about 4×1018cm−3. This resistivity is among the best (lowest) ever reported for p-type ZnO. Secondary-ion mass spectroscopic analysis gives an average As concentration about 5×1019cm−3, and a simple one-band fit of the temperature-dependent mobility curve yields an acceptor concentration of about 9×1019cm−3. This is strong evidence that the p-type dopant involves As, although it is not clear whether the acceptor is simply AsO or the recently suggested AsZn−2VZn.