Real-time measurements of Si 2 p core level during dry oxidation of Si(100)
Real-time measurements of Si 2 p core level during dry oxidation of Si(100)
复制标题
Si(100) 干氧化过程中 Si 2 p 核心水平的实时测量
DOI：
10.1103/physrevb.57.6294
复制
发表时间：
1998
期刊：
影响因子：
--
通讯作者：
H. Kato
中科院分区：
文献类型：
--
作者：
Y. Enta;Y. Miyanishi;H. Irimachi;A. Niwano;M. Suemitsu;N. Miyamoto;E. Shigemasa;H. Kato
在Si(100)的初始热氧化过程中，实时测量了化学位移的Si$2p$芯能级({mathm{Si}}^{4+})$。[Y.Enta等人，Appl.].冲浪。SCI。100/101,449(1996)]，表明在$650\ifmmode^\circ\else\textdegree\fi{}\mathrm{C}$，以下和以上的氧化温度下，分别存在两种生长模式：一级朗缪尔型吸附模式和二维岛生长模式。
The chemically shifted Si $2p$ core level $({\mathrm{Si}}^{4+})$ has been measured in real time during initial thermal oxidation of Si(100) by ${\mathrm{O}}_{2}$ gas. The time evolutions of the ${\mathrm{Si}}^{4+}$ intensities showed identical behaviors to those of O $2p$ intensities reported previously [Y. Enta et al., Appl. Surf. Sci. 100/101, 449 (1996)], demonstrating that there exist two growth modes for the oxidation: the first-order Langmuir-type adsorption mode and two-dimensional island growth mode at oxidation temperatures below and above $650\ifmmode^\circ\else\textdegree\fi{}\mathrm{C}$, respectively.