Applying a physics-based via model for the simulation of Through Silicon Vias

Applying a physics-based via model for the simulation of Through Silicon Vias
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应用基于物理的通孔模型来模拟硅通孔

DOI：
10.1109/epeps.2013.6703468
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发表时间：
2013
期刊：
2013 IEEE 22nd Conference on Electrical Performance of Electronic Packaging and Systems
影响因子：
--
通讯作者：
C. Schuster
C. Schuster
中科院分区：
--
文献类型：
--
作者：
David Dahl;X. Duan;A. Beyreuther;I. Ndip;K. Lang;C. Schuster

文献摘要

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本文提出了第一种有效的建模方法，硅通孔的基础上，基于物理的通孔模型的应用在硅金属边界的中介层。
This paper presents a first approach for the efficient modeling of Through Silicon Vias based on a Physics-Based Via model for application in silicon interposers with metallic boundaries.