Formation of oxygen-deficient type structural defects and state of ions in SiO2 glasses implanted with transition metal ions
Formation of oxygen-deficient type structural defects and state of ions in SiO2 glasses implanted with transition metal ions
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过渡金属离子注入SiO2玻璃中缺氧型结构缺陷的形成及离子态
DOI：
10.1016/0022-3093(90)90209-5
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发表时间：
1990
期刊：
影响因子：
--
通讯作者：
R. Zuhr
中科院分区：
文献类型：
--
作者：
H. Hosono;R. Weeks;H. Imagawa;R. Zuhr
用真空紫外光谱和EPR光谱测定了在能量为160 keV、0.5×1016to 6×10016ions/cm2剂量下注入Ti+、Cr+、Mn+、Fe+或Cu+的ⅲ型sio2玻璃的缺陷性质和缺陷浓度。除cu注入样品外，所有样品均有以7.5 eV为中心的强吸收带，主要归因于SiSi同键，其键距与si2h6分子相近。在注入层中，同键离子浓度和注入离子浓度具有相同的数量级。除cu注入样品外，所有样品中均存在与同键相关的E型中心。cu注入样品的异常行为归因于cu胶体的形成。研究表明，当Cr、Mn或Fe注入剂量高于~ 3×1016ions/cm2时，金属颗粒或胶体的形成会增强。
The properties and concentrations of oxygen-deficient type structural defects in type III SiO2glasses implanted with Ti+, Cr+, Mn+, Fe+, or Cu+to doses from 0.5×1016to 6×10016ions/cm2at an energy of 160 keV have been measured by using vacuum UV and EPR spectroscopies. An intense absorption band centered around 7.5 eV is observed in all the samples except for Cu-implanted ones and is attributed primarily to SiSi homo-bonds with the bond distance close to that of the Si2H6molecule. The homo-bond and implanted ion concentrations are of the same order of magnitude in the implanted layers. An E′ type center associated with the homo-bond is observed in all the samples except for Cu-implanted ones. Anomalous behaviors of the Cu-implanted samples are attributed to the formation of Cu-colloids. An enhanced formation of metallic particles or colloids is suggested for the samples implanted with Cr, Mn or Fe to doses higher than ∼3×1016ions/cm2.