Computational analysis of multi-contact phase change device for toggle logic operations
Computational analysis of multi-contact phase change device for toggle logic operations
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DOI：
10.1016/j.mssp.2021.106042
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发表时间：
2021-11
影响因子：
4.1
通讯作者：
R. Khan;N. H. Kan'an;J. Scoggin;H. Silva;A. Gokirmak
中科院分区：
文献类型：
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作者：
R. Khan;N. H. Kan'an;J. Scoggin;H. Silva;A. Gokirmak
在这项工作中，二维六触点相变器件，可以执行切换逻辑操作进行分析，通过二维MEMS模拟与动态材料建模，集成CMOS访问电路。通过使用非晶区域将一些触点与其他触点隔离以及通过热串扰在不同区域之间耦合的组合来实现切换配置。使用热串扰作为存储器层中的多触点器件中的耦合机制允许以显著更低的晶体管数量实现模拟路由和数字逻辑操作，具有非易失性的附加益处。仿真结果表明，随着厚度的增加，峰值电流和电压要求近似线性地提高。
In this work, two dimensional six-contact phase change devices that can perform toggle logic operations is analyzed through 2D electrothermal simulations with dynamic materials modelling, integrated with CMOS access circuitry. Toggle configurations are achieved through a combination of isolation of some contacts from others using amorphous regions and coupling between different regions via thermal crosstalk. Use of thermal crosstalk as a coupling mechanism in a multi-contact device in the memory layer allows implementation of analog routing and digital logic operations at a significantly lower transistor count, with the added benefit of non-volatility. Simulation results show approximately linear improvement in peak current and voltage requirements with thickness scaling.