Effects of a thin Al layer insertion between AlGaN and Schottky gate on the AlGaN/GaN high electron mobility transistor characteristics
Effects of a thin Al layer insertion between AlGaN and Schottky gate on the AlGaN/GaN high electron mobility transistor characteristics
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DOI：
10.1063/1.2168036
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发表时间：
2006-01
影响因子：
4
通讯作者：
T. Nanjo;T. Oishi;M. Suita;Y. Abe;Y. Tokuda
中科院分区：
文献类型：
--
作者：
T. Nanjo;T. Oishi;M. Suita;Y. Abe;Y. Tokuda
为了改进AlGaN / GaN高电子迁移率晶体管，在AlGaN势垒层和栅极触点之间插入了厚度为3nm的Al层。在我们之前对肖特基二极管的实验中，我们证实了电容-门电压特性的显著改善，特别是在低频时，以及栅极泄漏电流的急剧减少，这应该解释为AlGaN表面与氧相关的陷阱密度的减少。由于陷阱的减少，晶体管显示出电流崩溃的显著改善，而跨导性没有下降。
To improve an AlGaN∕GaN high electron mobility transistor, an Al layer as thin as 3 nm was inserted between the AlGaN barrier layer and the gate contact. At our preceded experiments on Schottky diodes, we confirmed significant improvement in capacitance-gate voltage characteristics especially at a low frequency as well as drastic reduction in gate leakage current, which should be interpreted in terms of decrease in oxygen-related trap density at the AlGaN surface. As a result of the trap reduction, the transistor indicates marked improvement of current collapse with no degradation in transconductance.