A combined-nanoimprint-and-photolithography patterning technique
A combined-nanoimprint-and-photolithography patterning technique
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DOI：
10.1016/j.mee.2004.01.041
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发表时间：
2004-05-01
影响因子：
2.3
通讯作者：
Guo, LJ
中科院分区：
文献类型：
--
作者：
Cheng, X;Guo, LJ
我们提出了一种新的光刻技术，结合了纳米压印光刻（NIL）和光刻的优点。在这种结合纳米压印和光刻（CNP）技术，我们介绍了一种混合掩模模具由UV透明材料和光阻挡金属层放置在模具突起的顶部。我们证明了使用这种混合模具的CNP方法可以实现无残留层的抗蚀剂图案，并且抗蚀剂图案可以具有比模具上的特征更高的纵横比。此外，与NIL中常用的热塑性聚合物相比，CNP技术中使用的光致抗蚀剂可以提供更高的蚀刻耐久性。(C)2004 Elsevier B.V.保留所有权利。
We propose a new lithography technique that combines the advantages of nanoimprint lithography (NIL) and photolithography. In this combined-nanoimprint-and-photolithography (CNP) technique, we introduce a hybrid mask-mold made from UV transparent material and with a light-blocking metal layer placed on top of the mold protrusions. We demonstrate that the CNP method using such a hybrid mold can achieve resist patterns without residual layer, and the resist patterns can have higher aspect ratio than the feature on the mold. In addition, the photoresist used in the CNP technique can provide higher etching durability compared with thermal plastic polymers that are commonly used in NIL. (C) 2004 Elsevier B.V. All rights reserved.