Raman scattering and anomalous current algebra in Mott insulators.
Raman scattering and anomalous current algebra in Mott insulators.
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莫特绝缘体中的拉曼散射和反常电流代数。
DOI：
10.1103/physrevlett.73.500
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发表时间：
1994
影响因子：
8.6
通讯作者：
Wiegmann
中科院分区：
文献类型：
--
作者：
Khveshchenko;Wiegmann
最近在一些绝缘铜氧化物[1]中进行的非弹性光散射实验揭示了在交叉极化刚好低于光吸收阈值的情况下出现的新激发。这一观察结果表明，存在一个局部激子的状态与奇宇称相对于空间反射。本文提出了Mott绝缘体中高能大位移拉曼散射的理论，并将实验[1]解释为空穴和双占据位的手征束缚态与拓扑磁激发的证据。这些复合材料的形成是超导性的各种拓扑机制的一个重要特征。我们表明，非弹性光散射提供了一个工具，直接测量的本地手性和异常项的电子电流代数。
Recent experiments on inelastic light scattering in a number of insulating cuprates [1] revealed a new excitation appearing in the case of crossed polarizations just below the optical absorption threshold. This observation suggests that there exists a local exciton-like state with an odd parity with respect to a spatial reflection. We present the theory of high energy large shift Raman scattering in Mott insulators and interpret the experiment [1] as an evidence of a chiral bound state of a hole and a doubly occupied site with a topological magnetic excitation. A formation of these composites is a crucial feature of various topological mechanisms of superconductivity. We show that inelastic light scattering provides an instrument for direct measurements of a local chirality and anomalous terms in the electronic current algebra.