High responsivity and internal gain mechanisms in Au-ZnMgO Schottky photodiodes
High responsivity and internal gain mechanisms in Au-ZnMgO Schottky photodiodes
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DOI：
10.1063/1.3340945
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发表时间：
2010-03
影响因子：
4
通讯作者：
G. Tabares;A. Hierro;J. Ulloa;A. Guzmán;E. Muñoz;A. Nakamura;T. Hayashi;J. Temmyo
中科院分区：
文献类型：
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作者：
G. Tabares;A. Hierro;J. Ulloa;A. Guzmán;E. Muñoz;A. Nakamura;T. Hayashi;J. Temmyo
基于 Au-ZnMgO/蓝宝石的肖特基光电二极管覆盖了 3.35 至 3.48 eV 的光谱区域，紫外/可见光抑制比高达 ∼105，响应度高达 185 A/W。由于内部增益机制的存在，抑制比和响应率都得到了极大的提高，通过这种机制，补偿薄膜在光照下变得高度导电。这导致通过肖特基势垒的隧道电流大幅增加，产生作为入射光子通量函数的内部增益。
Schottky photodiodes based on Au-ZnMgO/sapphire are demonstrated covering the spectral region from 3.35 to 3.48 eV, with UV/VIS rejection ratios up to ∼105 and responsivities as high as 185 A/W. Both the rejection ratio and the responsivity are shown to be largely enhanced by the presence of an internal gain mechanism, by which the compensated films become highly conductive as a result of illumination. This causes a large increase in the tunnel current through the Schottky barrier, yielding internal gains that are a function of the incident photon flux.