Transient photovoltage and dielectric relaxation time in porous silicon
Transient photovoltage and dielectric relaxation time in porous silicon
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DOI：
10.1063/1.1471383
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发表时间：
2002-05
影响因子：
3.2
通讯作者：
Volodimyr Duzhko;F. Koch;T. Dittrich
中科院分区：
文献类型：
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作者：
Volodimyr Duzhko;F. Koch;T. Dittrich
对不同孔隙率的自支撑多孔硅进行了瞬态光电压（PV）测量。对于低孔隙率的多孔硅，在表面空间电荷区域发生快速电荷载流子分离。由于颗粒间传输对载流子分离的限制，PV 瞬态中出现了延迟分量。对于纳米多孔硅，不存在快速分量，并且光伏瞬变在时间上被强烈延迟。延迟 PV 瞬态的最大值与通过使用直流电导率测量获得的介电弛豫时间相关。这为多孔半导体的非接触式电表征及其应用提供了机会。
Transient photovoltage (PV) measurements have been carried out on free-standing porous silicon of different porosity. For porous silicon of low porosity, fast charge-carrier separation takes place in the surface space-charge region. A retarded component arises in the PV transients due to limitation of the separation of charge carriers by interparticle transport. For nanoporous silicon, the fast component is absent and the PV transients are retarded strongly in time. The maximum of the retarded PV transients is correlated with the dielectric relaxation time which was obtained by using dc conductivity measurements. This opens opportunities to a contactless electrical characterization of porous semiconductors and its application.