Measurement of Defect-Mediated Diffusion: The Case of Silicon Self-Diffusion
Measurement of Defect-Mediated Diffusion: The Case of Silicon Self-Diffusion
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缺陷介导扩散的测量：硅自扩散案例
DOI：
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发表时间：
2006
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通讯作者：
E. Seebauer
中科院分区：
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作者：
R. Vaidyanathan;M. Jung;R. Braatz;E. Seebauer
在许多固体中，外来原子的扩散主要通过与晶格中的原子周期性交换的高度移动的中间物质发生。提出了一种通过初始阶跃浓度分布的短时衰减确定关键扩散参数的方法。该方法利用了可以通过薄膜沉积制造阶跃浓度分布的相对容易性，并且在非常短的时间内提供了用于获得与扩散长度和缺陷形成相关的参数的特别简单的分析手段。应用该方法对硅的同位素异质结构表明，在实验的真空条件下，间隙原子介导自扩散。© 2005美国化学工程师学会AIChE J，2006
In many solids, diffusion of foreign atoms takes place primarily through highly mobile intermediate species that periodically exchange with atoms in the crystalline lattice. A method is developed for determining key diffusion parameters via the short-time decay of an initial step concentration profile. This method takes advantage of the relative ease with which step concentration profiles can be fabricated by thin film deposition, and in the limit of very short times provides particularly simple analytical means for obtaining parameters connected to diffusion length and defect formation. Application of the method to isotopic heterostructures of silicon shows that under the ultrahigh vacuum conditions of the experiment, interstitial atoms mediate self-diffusion. © 2005 American Institute of Chemical Engineers AIChE J, 2006