Electronically Controlled Chemical Stability of Compound Semiconductor Surfaces
Electronically Controlled Chemical Stability of Compound Semiconductor Surfaces
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化合物半导体表面的电子控制化学稳定性
DOI：
10.1021/acsami.9b10739
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发表时间：
2019
影响因子：
9.5
通讯作者：
Walukiewicz Wladek
中科院分区：
文献类型：
--
作者：
Gao Junning;Lee Yeonbae;Yu Kin Man;Mao Samuel S;Walukiewicz Wladek
研究潮湿环境对半导体降解的影响，以了解表面电荷对材料稳定性的作用。选择两种截然不同的半导体，其费米能级稳定能EFS位于导带（CdO）和价带（SnTe）内，并研究了暴露于85°C和85%相对湿度条件对其电性能的影响。体费米能级EF低于EFS且表面带正电的未掺杂CdO薄膜非常不稳定。当 EF 移动到 EFS 以上时，掺杂的稳定性大大提高，并且表面带负电。这种电荷控制的反应性通过具有 EFaboveEFS 的未掺杂 p 型 SnTe 的优异稳定性得到进一步证实。这些不同的反应性可以通过表面吸引活性 OH- 或钝化 H+ 离子来解释。目前的结果对于理解半导体表面与水或离子溶液的相互作用具有重要意义。
Effects of a humid environment on the degradation of semiconductors were studied to understand the role of the surface charge on material stability. Two distinctly different semiconductors with the Fermi level stabilization energyEFSlocated inside the conduction band (CdO) and valence band (SnTe) were selected, and effects of an exposure to 85 °C and 85% relative humidity conditions on their electrical properties were investigated. Undoped CdO films with bulk Fermi levelEFbelowEFSand positively charged surface are very unstable. The stability greatly improves with doping whenEFshifts aboveEFS, and the surface becomes negatively charged. This charge-controlled reactivity is further confirmed by the superior stability of undoped p-type SnTe withEFaboveEFS. These distinct reactivities are explained by the surface attracting either the reactive OH–or passivating H+ions. The present results have important implications for understanding the interaction of semiconductor surfaces with water or, in general, ionic solutions.