Growth and Features of Epitaxial Graphene on SiC
Growth and Features of Epitaxial Graphene on SiC
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DOI：
10.7566/jpsj.84.121014
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发表时间：
2015-12-15
影响因子：
1.7
通讯作者：
Starke, Ulrich
中科院分区：
文献类型：
--
作者：
Kusunoki, Michiko;Norimatsu, Wataru;Starke, Ulrich
综述了近年来在碳化硅衬底上外延石墨烯的研究进展，重点介绍了石墨烯的生长、结构和电子特性。均匀的石墨烯可以在晶片尺度上生长在碳化硅(0001)上，而在碳化硅(000(1)Over bar)多层膜上，可旋转堆积的石墨烯具有类似单层的电子性质。HRTEM揭示了石墨烯在两种表面的形成机理和结构特征。生长的石墨烯的高结构和高电子质量通过拉曼光谱和磁输运表征进行了监测。用高分辨率ARPES测量了棒点上(K)附近的电子色散，得到了ABA和ABC堆积的三层石墨烯。测量还直接揭示了石墨烯的电子结构是通过转移掺杂和原子嵌入来操纵的。特别是，介观尺度上的p和n掺杂区以及通过控制Ge插层在碳化硅上制备的p-n结表现出弹道输运和克莱因隧道效应，这预示着在碳化硅上外延石墨烯具有新的潜力。
Recent progress of epitaxial graphene on SiC was reviewed, focusing on its growth and structural and electronic features. Homogeneous graphene can be grown on SiC(0001) on a wafer scale, however on SiC(000 (1) over bar) multilayer but rotationally stacked graphene with monolayer like electronic property grows. HRTEM revealed the formation mechanism and structural features of graphene on the both surfaces. The high structural and electronic quality of the grown graphene is monitored by Raman spectroscopy and magneto-transport characterization. High-resolution ARPES measurements of the electronic dispersion around the (K) over bar -point retrieved the ABA and ABC stacked trilayer graphene. The measurements also directly revealed that electronic structures of graphene were manipulated by transfer doping and atomic intercalation. In particular, p- and n-doped regions on a meso-scale and the p-n junctions prepared on SiC via controlling intercalation of Ge exhibited ballistic transport and Klein tunneling, which predicted novel potentials on to epitaxial graphene on SiC.