High-Gain AlGaN Solar-Blind Avalanche Photodiodes
High-Gain AlGaN Solar-Blind Avalanche Photodiodes
复制标题
高增益 AlGaN 日盲雪崩光电二极管
DOI：
10.1109/led.2013.2296658
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发表时间：
2014-03-01
影响因子：
4.9
通讯作者：
Li, Zhong Hui
中科院分区：
文献类型：
--
作者：
Shao, Zhen Guang;Chen, Dun Jun;Li, Zhong Hui
本文报道了利用金属有机化学气相沉积技术在AlN模板上生长出具有独立吸收和倍增结构的高性能AlGaN太阳盲雪崩光电二极管（apd）。在APD器件的制造中，我们采用了一种表面蚀刻后的光电处理工艺，以减少蚀刻引起的损伤。引入该工艺后，在所制器件的漏电流明显减小，在保护电流约束为10- 5a的测量条件下，在84 V的反向偏置下获得了创纪录的1.2×104高增益。
This letter reports high performance AlGaN solar-blind avalanche photodiodes (APDs) with separate absorption and multiplication structure grown by metal-organic chemical vapor deposition on AlN templates. In fabricating APD devices, we applied a photo-electrochemical treatment process after mesa etching to reduce damage induced by etching. After introducing this process, the leakage current of the fabricated devices was reduced obviously and a record-high gain of 1.2×104 at the reverse bias of 84 V was achieved under the measurement condition with the protection current constrained to 10-5 A.