Probing the interfacial coupling in ternary van der Waals heterostructures
Probing the interfacial coupling in ternary van der Waals heterostructures
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探讨三元范德华异质结构中的界面耦合
DOI：
10.1038/s41699-022-00362-0
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发表时间：
2022-12
影响因子：
9.7
通讯作者：
Ping-Heng Tan
中科院分区：
文献类型：
--
作者：
Heng Wu;Miao-Ling Lin;Yu-Chen Leng;Xue Chen;Yan Zhou;Jun Zhang;Ping-Heng Tan
范德华异质结各组分之间良好的界面耦合是相关器件优异性能的前提。由于基于VDWHs的器件通常由三个或更多组分组成，因此在器件制造过程中，有效地评估多个异质界面中的界面耦合质量是至关重要的。在由hBN、石墨烯(Gr)和过渡金属二卤化物(TMD)薄片组成的三元VdWHs中，我们通过TMD组分中的C激子能量，实现了共振激发下低频拉曼光谱对界面耦合的探测和量化。根据hBN/TMD/Gr三元VdWHs中出现的层间振动模式的频率，估算了hBN/TMD和TMD/Gr界面的界面耦合力常数，作为定量评价界面耦合强度的参数。此外，在Gr/hBN/MoTe2三元VdWHs中还成功地揭示了Gr/hBN界面的界面耦合强度，这不能直接用Gr/hBN二元vdWH来表征，因为它的层间模式是不可见的，具有弱的电子-声子耦合。这一通用策略可以进一步扩展到探测和量化多元VDWHs和相关器件中的界面耦合质量。
Good interfacial coupling between each constituent of van der Waals Heterostructures (vdWHs) is the prerequisite for the distinguished performance of related devices. Since vdWHs-based devices commonly consist of three or more constituents, an effective evaluation of interfacial coupling quality in multiple heterointerfaces is critical during the device fabrication process. Here, in ternary vdWHs composed of hBN, graphene (Gr) and transition metal dichalcogenide (TMD) flakes, which are essential building blocks for low-dimensional vdWHs-based electronic and optoelectronic devices, we realized probe and quantification of the interfacial coupling by low-frequency Raman spectroscopy under resonant excitation through the C exciton energy in TMD constituents. Based on the frequencies of emerging interlayer vibration modes in hBN/TMD/Gr ternary vdWHs, the interfacial coupling force constants of hBN/TMD and TMD/Gr interfaces are estimated as parameters to quantitatively evaluate the interfacial coupling strength at the corresponding interfaces. Moreover, the interfacial coupling strength at Gr/hBN interface is also successfully revealed in Gr/hBN/MoTe2ternary vdWHs, which cannot be directly characterized from Gr/hBN binary vdWH due to its unobservable interlayer modes with weak electron-phonon coupling. This general strategy can be further extended to probe and quantify the interfacial coupling quality in polynary vdWHs and related devices.
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