Comparative study of avalanche photodiodes with different structures in scintillation detection
Comparative study of avalanche photodiodes with different structures in scintillation detection
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不同结构雪崩光电二极管在闪烁探测中的对比研究
DOI：
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发表时间：
2000
期刊：
影响因子：
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通讯作者：
Maciej Wegrzecki
中科院分区：
文献类型：
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作者：
M. Moszyriskia;M. Kapusta;M. Balcerzyk;M. Szawłowski;D. Wolski;I. Węgrzecka;Maciej Wegrzecki
用CsI(Tl)、BGO、LSO和YAP闪烁体研究了Advanced Photonix，Inc.(API)、Hamamatsu SPL 2560 APD和ITE生产的斜边大面积雪崩光电二极管(LAAPD)在闪烁探测中的性能。测量包括直流增益特性、对X射线和光的相对响应、来自/sup 55/Fe源的5.9keV X射线的能量分辨率、所研究闪烁体的电子-空穴(e-h)对数目的测定以及来自a/sup 137/Cs源的662keV/spl伽马射线的能量分辨率。对于CsI(Tl)和YAP晶体，测得最大的e-h对数分别为33800 e-h/MeV和10200 e-h/MeV。在滨松警察局，这两个数字分别为30900 e-h/mev和4700e-h/mev。对于ITE的apd，我们用CsI(Tl)测量了16500 e-h/MeV。对于662keV的能量分辨率，CSI(TL)与来自API的LAAPD的耦合最好，为4.9%，而滨松APD则稍差，为5.8%。
The performance of beveled-edge large area avalanche photodiodes (LAAPD) produced by Advanced Photonix, Inc. (API), Hamamatsu SPL 2560 APDs and APDs from Institute of Electron Technology (ITE) were studied in scintillation detection using CsI(Tl), BGO, LSO and YAP scintillators. Measurements covered DC gain characteristics, relative response to X-rays and light, energy resolution for 5.9 keV X-rays from /sup 55/Fe source, determination of electron-hole (e-h) pair number for the studied scintillators and their energy resolution for 662 keV /spl gamma/-rays from a /sup 137/Cs source. The highest number of e-h pairs was measured with the LAAPD from API equal to 33800 e-h/MeV for CsI(Tl) and 10200 e-h/MeV for YAP crystal. In the case of the Hamamatsu APD, the respective numbers were 30900 e-h/MeV and 4700 e-h/MeV. For the APD from ITE we measured 16500 e-h/MeV with CsI(Tl). The best energy resolution of 4.9% for 662 keV was observed with CsI(Tl) coupled to LAAPD from API, while the Hamamatsu APD showed somewhat worse result of 5.8%.