Vertical/Planar Growth and Surface Orientation of Bi2Te3 and Bi2Se3 Topological Insulator Nanoplates
Vertical/Planar Growth and Surface Orientation of Bi2Te3 and Bi2Se3 Topological Insulator Nanoplates
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Bi2Te3 和 Bi2Se3 拓扑绝缘体纳米板的垂直/平面生长和表面取向
DOI：
10.1021/acs.nanolett.5b00240
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发表时间：
2015-05-01
期刊：
影响因子：
10.8
通讯作者：
Zhang, Ze
中科院分区：
文献类型：
--
作者：
Jiang, Ying;Zhang, Xun;Zhang, Ze
纳米结构不仅对基础研究有吸引力，而且对自下而上的纳米制造也有很大的希望。过去，纳米线等一维垂直/平面纳米材料的生长取得了重大进展。然而，二维纳米材料的研究工作仍然缺乏，特别是那些从衬底中生长出来的纳米材料。我们在这里报道了拓扑绝缘体Bi2Se3和Bi2Te3纳米板在云母上的垂直生长。与一般的看法形成鲜明对比的是，这些纳米板不是棱柱，暴露（100）侧表面，这将使表面积最小化。相反，它们是由（01-4）、（015）和（001）切面包围的截锥体。第一性原理计算与实验相结合，表明表面氧化在形成这些意想不到的表面时的重要性。
Nanostructures are not only attractive for fundamental research but also offer great promise for bottom-up nanofabrications. In the past, the growth of one-dimensional Vertical/planar nanomaterials such as nano-wires has made significant progresses. However, works on two-dimensional nanomaterials are still lacking, especially for those grown out of a substrate. We report here a vertical growth of topological insulator, Bi2Se3 and Bi2Te3, nanoplates on mica. In stark contrast to the general belief, these nanoplates are not prisms exposing (100) lateral surfaces, which are expected to minimize the surface area. Instead, they are frustums, enclosed by (01-4), (015), and (001) facets. First-principles calculations, combined with experiments, suggest the importance of surface oxidation in forming these unexpected surfaces.